Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−xClx Film with Potassium Chloride Additives
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T. Zhong | Changming Zhu | Xiao-guang Liang | Fuchi Liu | F. Lv | Kang Ling | Jun Liu | W. Kong | C. Zhu
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T. Zhong | Changming Zhu | Xiao-guang Liang | Fuchi Liu | F. Lv | Kang Ling | Jun Liu | W. Kong | C. Zhu