论文信息 - Total Ionizing Dose Characterization of an 8-bit 200-MSps Switched-Capacitor Pipeline A-to-D Converter in 32nm SOI CMOS

Total Ionizing Dose Characterization of an 8-bit 200-MSps Switched-Capacitor Pipeline A-to-D Converter in 32nm SOI CMOS

A Radiation-Hardened By Design 8-bit 32nm SOI CMOS pipeline ADC shows no AC performance nor non-linearity worsening vs. TID when operated at 200MSps sampling rate, -1dBFS sinewave input amplitude. The circuit shows no visible performance variation during irradiation, and maintains >42dBFS SNR, >61dBc SFDR up to 1Mrad(Si) after LMS (Least Mean Square) gain and offset calibration techniques are applied.

Manuel Cabanas-Holmen | Alfio Zanchi | Mark Yao | Barry Meaker | Anthony Amort

[1] P. Dodd,et al. Radiation effects in SOI technologies , 2003 .

[2] Borivoje Nikolic,et al. A 2.8GS/s 44.6mW time-interleaved ADC achieving 50.9dB SNDR and 3dB effective resolution bandwidth of 1.5GHz in 65nm CMOS , 2012, 2012 Symposium on VLSI Circuits (VLSIC).

[3] C. Hafer,et al. Total Ionizing Dose and Single Event Latch-Up Characterization of a 16-Bit A-to-D Converter Fabricated in 0.18µm Triple-Well CMOS Process , 2012, 2012 IEEE Radiation Effects Data Workshop.

[4] Borivoje Nikolic,et al. A 2.8 GS/s 44.6 mW Time-Interleaved ADC Achieving 50.9 dB SNDR and 3 dB Effective Resolution Bandwidth of 1.5 GHz in 65 nm CMOS , 2013, IEEE Journal of Solid-State Circuits.