Microchannel epitaxy: an overview

Abstract A new concept of epitaxy named microchannel epitaxy (MCE) is presented. In MCE, lattice information is transferred through narrow microchannels while the transfer of defect information is prevented by the presence of amorphous film at the epitaxial layer–substrate interface. Two types of MCE, vertical and horizontal MCEs, are demonstrated. In the present article, a special focus is given on the horizontal MCE, which we call simply MCE. MCE is composed of selective area epitaxy in the narrow microchannel and successive epitaxial lateral growth. It was demonstrated that flat MCE layers have been successfully obtained for GaAs and InP on Si substrates. Although dislocations propagate through the microchannel into the grown layer, wide dislocation-free regions have been obtained outside this dislocated area. MCE with high width-to-thickness ratio is successfully achieved by molecular beam epitaxy by sending molecular beams with a low angle to the substrate surface.

[1]  T. Nishinaga,et al.  Epitaxial Lateral Overgrowth of Si by LPE with Sn Solution and Its Orientation Dependence , 1989 .

[2]  H. Amano,et al.  Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer , 1986 .

[3]  Y. Enomoto,et al.  Advances in Superconductivity VIII , 1996 .

[4]  T. Nishinaga,et al.  Microchannel Epitaxy of GaAs from Parallel and Nonparallel Seeds : Structure and Mechanical and Thermal Properties of Condensed Matter , 2001 .

[5]  Y. S. Chang,et al.  Effect of growth temperature on epitaxial lateral overgrowth of GaAs on Si substrate , 1997 .

[6]  T. Shiosaki,et al.  Chemical Vapor Deposition of Single-Crystalline ZnO Film with Smooth Surface on Intermediately Sputtered ZnO Thin Film on Sapphire , 1978 .

[7]  S. Naritsuka,et al.  Step sources in microchannel epitaxy of InP , 1998 .

[8]  S. Naritsuka,et al.  Epitaxial lateral overgrowth of InP by liquid phase epitaxy , 1995 .

[9]  S. Naritsuka,et al.  Interface supersaturation in microchannel epitaxy of InP , 1999 .

[10]  H. Matsunami,et al.  Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer , 1980 .

[11]  Y. Suzuki,et al.  The sources of atomic steps in epitaxial lateral overgrowth of Si , 1990 .

[12]  T. Nishinaga,et al.  Optimization of growth condition for wide dislocation-free GaAs on Si substrate by microchannel epitaxy , 1998 .

[13]  C. Bozler,et al.  Low‐dislocation‐density GaAs epilayers grown on Ge‐coated Si substrates by means of lateral epitaxial overgrowth , 1982 .

[14]  S. Naritsuka,et al.  Liquid-phase epitaxy (LPE) microchannel epitaxy of InP with high reproducibility achieved by predeposition of In thin layer , 1999 .

[15]  L. Jastrzebski,et al.  Growth Process of Silicon Over SiO2 by CVD: Epitaxial Lateral Overgrowth Technique , 1983 .

[16]  S. Zhang,et al.  Epitaxial lateral overgrowths of GaAs on (001) GaAs substrates by LPE: Growth behavior and mechanism , 1990 .

[17]  Y. Suzuki,et al.  Epitaxial lateral overgrowth of Si on non-planar substrate , 1991 .

[18]  T. Nishinaga,et al.  LPE Lateral Overgrowth of GaP , 1990 .

[19]  P. Vohl.  Vapor-phase epitaxy of GaInAsP and InP , 1981 .