1.7-kV and 0.55- $\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

We report vertical GaN-on-GaN p-n diodes with a breakdown voltage (BV) of 1.7 kV and a low differential specific ON-resistance R<sub>ON</sub> of 0.55 mQ · cm<sup>2</sup> with current spreading considered (or 0.4 mQ · cm<sup>2</sup> using the diode bottom mesa size), resulting in a figure-of-merit (V<sub>B</sub><sup>2</sup>/R<sub>ON</sub>) of 5.3 GW/cm<sup>2</sup> (or 7.2 GW/cm<sup>2</sup>). These devices exhibit a current swing over 14 orders of magnitude and a low ideality factor of 1.3. Temperature dependent I-V measurements show that the BV increases with increasing temperature, a signature of avalanche breakdown.

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