论文信息 - Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiOx/Poly-Si Passivating Contacts - 字舞流文

Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiOx/Poly-Si Passivating Contacts

M. Zeman | O. Isabella | P. Procel | Can Han | Xiaodang Zhang | L. Mazzarella | Guangtao Yang | A. Montes | Yifeng Zhao | S. Eijt | H. Schut