Domain misorientation in sublimation grown 4H SiC epitaxial layers
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[1] E. Janzén,et al. Investigation of domain evolution in sublimation epitaxy of SiC , 1998 .
[2] A. Ellison,et al. Growth-related structural defects in seeded sublimation-grown SiC , 1997 .
[3] E. Janzén,et al. Crystalline imperfections in 4H SiC grown with a seeded Lely method , 1994 .