Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy
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James S. Speck | Feng Wu | J. Speck | S. H. Lim | Feng Wu | M. Craven | S. H. Lim | Michael D. Craven
[1] Pierre Lefebvre,et al. Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells , 1999 .
[2] J. Schermer,et al. Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology , 2002 .
[3] James S. Speck,et al. Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition , 1998 .
[4] James S. Speck,et al. STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS , 1998 .
[5] S. Chuang,et al. Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment , 2000 .
[6] R. Langer,et al. Giant electric fields in unstrained GaN single quantum wells , 1999 .
[7] M. Seelmann-Eggebert,et al. Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals , 1998 .
[8] James S. Speck,et al. POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY , 1999 .
[9] Pierre Lefebvre,et al. High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy , 2001 .
[10] Eric Sven Hellman,et al. The Polarity of GaN: a Critical Review , 1998 .
[11] L. Romano,et al. Faceted inversion domain boundary in GaN films doped with Mg , 2000 .
[12] James S. Speck,et al. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire , 2002 .
[13] Shigeru Nakagawa,et al. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect , 1998 .
[14] D. Greve,et al. Reconstructions of the GaN\(0001̄\) Surface , 1997 .
[15] Lester F. Eastman,et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .
[16] Characterization of free-standing hydride vapor phase epitaxy GaN , 2001 .
[17] F. Karouta,et al. Growth of High Quality, MOCVD Grown Ga-Polar GaN Layers on GaN Substrates after Novel Reactive Ion Etching , 1999 .
[18] R. Dupuis,et al. Ordering in bulk GaN : Mg samples: defects caused by Mg doping , 1999 .
[19] Shunro Fuke,et al. Dependence of impurity incorporation on the polar direction of GaN film growth , 2000 .
[20] J. Massies,et al. Barrier-width dependence of group-III nitrides quantum-well transition energies , 1999 .
[21] J. Im,et al. Reduction of oscillator strength due to piezoelectric fields in G a N / A l x Ga 1 − x N quantum wells , 1998 .
[22] M. Arlery,et al. POLARITY DETERMINATION OF GAN FILMS BY ION CHANNELING AND CONVERGENT BEAM ELECTRON DIFFRACTION , 1996 .
[23] Nicolas Grandjean,et al. Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells , 1999 .
[24] D. Bour,et al. Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers , 1996 .
[25] S. Denbaars,et al. Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN , 2002 .