Controlled planar interface synthesis by ultrahigh vacuum diffusion bonding/deposition

An ultrahigh vacuum (UHV) diffusion bonding/deposition instrument was designed and constructed, which can produce homophase and heterophase planar interfaces from a wide array of materials. The interfaces are synthesized in situ by diffusion bonding of two substrates with or without various interfacial layers, at temperatures up to about 1500 degree sign C. Substrate surfaces can be heat treated, ion-beam sputter cleaned, and chemically characterized in situ by Auger electron spectroscopy prior to deposition and/or bonding. Bicrystals can be synthesized by bonding two single-crystal substrates at a specified orientation. Interfacial layers can be deposited by electron beam evaporation and/or sputter deposition in any layered or alloyed combination on the substrates before bonding. The instrument can accommodate cylindrical and/or wafer type specimens whose sizes are sufficient for fracture mechanical testing to measure interface bond strength. A variety of planar interfaces of metals, semiconductors, and ceramics were synthesized. Examples of bonded stainless steel/Ti/stainless steel, Si/Si, and sapphire/sapphire interfaces are presented. (c) 2000 Materials Research Society.

[1]  J. Martín-Martínez.  Joining and adhesion of advanced inorganic materials: Editors: A.H. Carim, D.S. Schwartz and R.S. Silberglitt Materials Research Society Symposium Proceedings Vol. 314, San Francisco, CA, 1993, 250 pages, ISBN 1-55899-212-X, $73 ($68 in USA) , 1995 .

[2]  Kurt Scheerschmidt,et al.  Self‐propagating room‐temperature silicon wafer bonding in ultrahigh vacuum , 1995 .

[3]  Fritz J. Kub,et al.  Characterization of Si pn junctions fabricated by direct wafer bonding in ultra-high vacuum , 1998 .

[4]  R. F. Davis,et al.  Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN , 1996 .

[5]  R. Carpenter,et al.  Chemical and Structural Widths of Interfaces and Grain Boundaries in Silicon Nitride–Silicon Carbide Whisker Composites , 1995 .

[6]  R. F. Davis,et al.  Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001) , 1995 .

[7]  U. Gösele,et al.  SemiConductor Wafer Bonding: Science and Technology , 1998 .

[8]  E. Wallach,et al.  Modelling solid-state diffusion bonding , 1989 .

[9]  M. F. Islam,et al.  Isostatic diffusion bonding of a microduplex stainless steel , 1998 .

[10]  H. Fischmeister,et al.  Solid‐state bonding of accurately oriented metal/ceramic bicrystals in ultrahigh vacuum , 1993 .

[11]  C. Wan,et al.  Solid-state bonding of single-crystals of Ni(111)/Al2O3(0001) , 1993, Journal of Materials Science.

[12]  Development Of The Spin-valve Transistor , 1997, 1997 IEEE International Magnetics Conference (INTERMAG'97).

[13]  J. Lodder,et al.  Metal bonding during sputter film deposition , 1998 .

[14]  W. Maszara,et al.  Bonding of silicon wafers for silicon‐on‐insulator , 1988 .

[15]  Ryutaro Maeda,et al.  Transmission Electron Microscope Observations of Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation , 1999 .

[16]  N. Zaluzec,et al.  Reactive Gas Plasma Specimen Processing for Use in Microanalysis and Imaging in Analytical Electron Microscopy , 1997, Microscopy and Microanalysis.

[17]  D. Hamann,et al.  Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopy , 1996 .

[18]  Manfred Reiche,et al.  Hydrophobic silicon wafer bonding , 1994 .

[19]  David J. Smith,et al.  High-resolution interface analysis of SiC-whisker-reinforced Si3N4 and Al2O3 ceramic matrix composites , 1990 .

[20]  M. Salehi,et al.  Isostatic diffusion bonding of microduplex stainless steel , 1992 .