Millisecond flash lamp annealing of shallow implanted layers in Ge

Shallow n+ layers in Ge are formed by phosphorus implantation and subsequent millisecond flash lamp annealing. Present investigations are focused on the dependence of P redistribution, diffusion and electrical activation on heat input into the sample and flash duration. In contrast to conventional annealing procedures an activation up to 6.5×1019 cm−3 is achieved without any dopant redistribution and noticeable diffusion. Present results suggest that independently of pretreatment the maximum activation should be obtained at a flash energy that corresponds to the onset of P diffusion. The deactivation of P is explained qualitatively by mass action analysis which takes into account the formation of phosphorus-vacancy clusters.

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