Bistability and Switching Properties of Semiconductor Ring Lasers With External Optical Injection

We investigate both analytically and numerically the switching, locking and stability properties of a bistable semiconductor ring laser subject to an external optical injection. Minimum optical power required for the injected signal at certain frequency to switch the lasing direction of a bistable semiconductor ring laser from its initially lasing direction to initially nonlasing direction is determined. Locking to the injected signal and stability of the switched laser are investigated to give an area of reliable switching operation. Correspondingly, numerical simulation has been carried out to find successful switching and stable locking region with variable injection power and frequency, and is compared with the analytical results. The region obtained from simulation coincides well with the intersection of switching, locking and stable locking regions. The relation between switching speed and parameters of injected source is also studied numerically.

[1]  The effect of delayed optical feedback on semiconductor ring lasers , 2007, 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference.

[2]  T. Numai.  Analysis of signal voltage in a semiconductor ring laser gyro , 2000, IEEE Journal of Quantum Electronics.

[3]  Marc Sorel,et al.  Operating regimes of GaAs-AlGaAs semiconductor ring lasers: experiment and model , 2003 .

[4]  Yoh Ogawa,et al.  Bifurcation in 20-GHz gain-switched 1.55-/spl mu/m MQW lasers and its control by CW injection seeding , 1998 .

[5]  R. Lang,et al.  Injection locking properties of a semiconductor laser , 1982 .

[6]  M. Smit,et al.  A fast low-power optical memory based on coupled micro-ring lasers , 2004, Nature.

[7]  Siyuan Yu,et al.  Linear and nonlinear mode interactions in a semiconductor ring laser , 2005, IEEE Journal of Quantum Electronics.

[8]  K. Tai,et al.  Nonlinear dynamics induced by external optical injection in semiconductor lasers , 1997 .

[9]  Robert A. Morgan,et al.  Injection locking dynamics of vertical cavity semiconductor lasers under conventional and phase conjugate injection , 1996 .

[10]  G. Jacobsen,et al.  Locking conditions and stability properties for a semiconductor laser with external light injection , 1985 .

[11]  M. K. Haldar,et al.  Enhancement of modulation bandwidth of laser diodes by injection locking , 1996, IEEE Photonics Technology Letters.

[12]  Marc Sorel,et al.  Unidirectional bistability in semiconductor waveguide ring lasers , 2002 .

[13]  K. Kawashima,et al.  Cavity resonance shift and bandwidth enhancement in semiconductor lasers with strong light injection , 2003 .

[14]  Wixforth,et al.  A Semiconductor-Based Photonic Memory Cell. , 1999, Science.

[15]  Athanasios Gavrielides,et al.  Small-signal analysis of modulation characteristics in a semiconductor laser subject to strong optical injection , 1996 .

[16]  Joseph M. Ballantyne,et al.  Spatial beam switching and bistability in a diode ring laser , 2000 .

[17]  W. Lamb.  Theory of an optical maser , 1964 .

[18]  S. Arahira,et al.  30-GHz bandwidth 1.55-μm strain-compensated InGaAlAs-InGaAsP MQW laser , 1997, IEEE Photonics Technology Letters.

[19]  B. Lengyel.  Introduction to Laser Physics , 1966 .

[20]  T. Fujita,et al.  Bistability in two‐mode semiconductor lasers via gain saturation , 1987 .

[21]  G. Yabre.  Effect of relatively strong light injection on the chirp-to-power ratio and the 3 dB bandwidth of directly modulated semiconductor lasers , 1996 .