论文信息 - Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors - 字舞流文

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

T. Rotter | O. Katz | A. Horn | J. Salzman | D. Mistele | J. Aderhold | J. Graul | Z. Bougrioua | Z. Bougrioua | G. Bahir