An improved millimeter-wave small-signal modeling approach for HEMTs

An improved method to determine the small-signal equivalent circuit model for HEMTs is presented in this study, which is combination of the analytical approach and empirical optimization procedure. The parasitic inductances and resistances are extracted under pinch-off condition. The initial intrinsic elements are determined by conventional analytical method. Advanced design system agilent commercial circuit simulator is used to optimize the whole model parameters with small deviation of initial values. An excellent agreement between measured and simulated S-parameters is obtained for 2 × 20 µm2 gate width HEMT up to 40 GHz. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:464-469, 2014.

[1]  T. Brazil,et al.  An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices , 2008, IEEE Transactions on Microwave Theory and Techniques.

[2]  A. Santarelli,et al.  Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM Analyses , 2009, IEEE Transactions on Microwave Theory and Techniques.

[3]  C. Bolognesi,et al.  At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity , 2006, IEEE Transactions on Electron Devices.

[4]  Qian Fan,et al.  Small Signal Equivalent Circuit Modeling for AlGaN/GaN HFET: Hybrid Extraction Method for Determining Circuit Elements of AlGaN/GaN HFET , 2010, Proceedings of the IEEE.

[5]  M. Leong,et al.  Analytical Extraction of Extrinsic and Intrinsic FET Parameters , 2009 .

[6]  Yeong-Lin Lai,et al.  A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits , 2001 .

[7]  Alina Caddemi,et al.  Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K , 2006, IEEE Transactions on Instrumentation and Measurement.

[8]  Jianjun Gao.  RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors , 2010 .

[9]  G. Kompa,et al.  A new small-signal modeling approach applied to GaN devices , 2005, IEEE Transactions on Microwave Theory and Techniques.

[10]  A. Werthof,et al.  Direct parameter extraction method for deep submicrometer metal oxide semiconductor field effect transistor small signal equivalent circuit , 2009 .

[11]  Jianjun Gao.  An Approach for Determining PHEMT Small-Signal Circuit Model Parameters Up to 110GHz , 2005 .

[12]  Nicole Andrea Evers,et al.  Direct determination of the bias-dependent series parasitic elements in SiC MESFETs , 2003 .

[13]  P.M. White,et al.  Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements , 1993, IEEE Microwave and Guided Wave Letters.

[14]  Shen-Whan Chen,et al.  An accurately scaled small-signal model for interdigitated power P-HEMT up to 50 GHz , 1997 .

[15]  Jianjun Gao,et al.  PAD MODELING BY USING ARTIFICIAL NEURAL NETWORK , 2007 .

[16]  D. Schreurs,et al.  High-Frequency Extraction of the Extrinsic Capacitances for GaN HEMT Technology , 2011, IEEE Microwave and Wireless Components Letters.