Monte Carlo Simulation Method in the Growing Process of Crystal Particles

The applied model and the simulated method that computers simulate the growth of crystal particles are divided into 3 kinds: Monte Carlo method or the improved Monte Carlo method (MC method) , the constant - diffusing - interface - ground model and the Laguerre model, for which the cell - typed crystal particles are regarded as the chessboard -typed distribution of Laguerre. They are especially applied to the simulated welding heat affecting zone (HAZ) , in which the two dimensions and the three dimensions that crystal particles become big gain the better result. But, the border treating of the growing model must be perfected continuously. Especially the growth of crystal particles is related to the parameters of the crystal temperature, time, atmosphere and so on. The simulation of the process, in which crystal particles grow under the conditions of complicated technology, is a problem that should be solved in the realm.