Point‐defect generation during oxidation of silicon in dry oxygen. II. Comparison to experiment

In the companion paper [J. Appl. Phys. 59, 2541 (1986)], we developed a model based on a continuity equation approach for the supersaturation of interstitials during oxidation in dry O2. The analysis resulted in an expression having the experimentally observed sublinear dependence of oxidation rate without requiring any assumptions of nonlinearity. Through observations of the dependence of the linear rate constant at the linear‐parabolic model of oxidation on ambient oxygen pressure, predictions were made of how the interstitial supersaturation will vary with oxidation rate at a given temperature. In this paper, those predictions are compared to data for the enhanced diffusion of phosphorus in 〈100〉 silicon during oxidation at 900 and 1000 °C in both 100% O2 and O2‐Ar mixtures as well as existing data for oxidation enchanced diffusion and stacking fault growth.

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