论文信息 - Formation of InGaAs/GaAs quantum-well dots by using self-assembled InAs quantum dots as stressors

Formation of InGaAs/GaAs quantum-well dots by using self-assembled InAs quantum dots as stressors

InGaAdGaAs quantum wells strained by self-assembled InAs quantum dots form quantum-well dots on a GaAs substrate. The lmewidth, intensity and spatial homogeneity of the photoluminescence peak for the quantum-well dots are improved significantly compared with the self-assembled InAs quantum dots. 02003 Optical Society of America OCIS codes: (230.0250) Optoelectronics; (250.5230) Photolummescence; (160 6000) Semiconductors, including MQW

Yujie J. Ding | Zhiming M. Wang | X. Mu | G. Salamo

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