Size-dependent electrical behavior of spatially inhomogeneous barrier height regions on silicon
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[1] R. V. Duyne,et al. Nanosphere Lithography: Size-Tunable Silver Nanoparticle and Surface Cluster Arrays , 1999 .
[2] J. Osvald. Numerical study of electrical transport in inhomogeneous Schottky diodes , 1999 .
[3] H. Hoffmann,et al. The origin of the integral barrier height in inhomogeneous Au/Co/GaAs67P33-Schottky contacts: A ballistic electron emission microscopy study , 1998 .
[4] L. Samuelson,et al. Electron transport at Au/InP interface with nanoscopic exclusions , 1996 .
[5] Kuniaki Nagayama,et al. Continuous Convective Assembling of Fine Particles into Two-Dimensional Arrays on Solid Surfaces , 1996 .
[6] D. Meissner,et al. Electrochemical features of electrodes modified with Multiple Nano Contacts (MNCs) from colloidal noble metal particles , 1995 .
[7] R. V. Duyne,et al. Nanosphere lithography: A materials general fabrication process for periodic particle array surfaces , 1995 .
[8] Y. Nakato,et al. Efficient Photoelectrochemical Solar Cells Equipped with an n‐Si Electrode Modified with Colloidal Platinum Particles , 1994 .
[9] N. Lewis,et al. Measurement of barrier heights of semiconductor/liquid junctions using a transconductance method: Evidence for inversion at n-Si/CH3OH-1,1′-dimethylferrocene+/0 junctions , 1994 .
[10] R. Williams,et al. Lateral variation in the Schottky barrier height of Au/PtSi/(100)Si diodes , 1994 .
[11] Schulz,et al. Fluctuations of the Au-Si(100) Schottky barrier height. , 1993, Physical review letters.
[12] J. Sullivan,et al. On the inhomogeneity of Schottky barriers , 1992 .
[13] Tung,et al. Electron transport at metal-semiconductor interfaces: General theory. , 1992, Physical review. B, Condensed matter.
[14] P. Niedermann,et al. Ballistic electron emission microscopy study of PtSi–n‐Si(100) Schottky diodes , 1992 .
[15] J. Sullivan,et al. Electron transport of inhomogeneous Schottky barriers: A numerical study , 1991 .
[16] Amit Kumar,et al. Further mechanistic studies of n-type silicon photoelectrodes: behavior in contact with methanol-dimethylferrocene+/0 and in contact with aqueous electrolytes , 1991 .
[17] R. T. Tung,et al. ELECTRON TRANSPORT OF INHOMOGENEOUS SCHOTTKY BARRIERS , 1991 .
[18] Y. Nakato,et al. Effect of microscopic discontinuity of metal overlayers on the photovoltages in metal-coated semiconductor-liquid junction photoelectrochemical cells for efficient solar energy conversion , 1988 .
[19] Aochi,et al. Size effect of parallel silicide contact. , 1987, Physical review. B, Condensed matter.
[20] Herbert Zirath,et al. Characteristics of Schottky diodes with microcluster interface , 1983 .
[21] S. Laux,et al. Size dependence of ’’effective’’ barrier heights of mixed‐phase contacts , 1982 .
[22] I. Ohdomari,et al. Microstructure and Schottky barrier height of iridium silicides formed on silicon , 1979 .