Breakdown characteristics in InP/InGaAs avalanche photodiode with p-i-n multiplication layer structure

We report on the breakdown voltages in InP/InGaAs avalanche photodiode (APD) experimentally and theoretically, based on the parameters of electric field distribution, carrier concentrations, thicknesses, and temperatures. According to the calculation, the breakdown voltage has its minimum point, w0, at each carrier concentration in charge plate and avalanche photodiode with very thin multiplication layer width will provide high gain bandwidth product. The devices having different multiplication layer width showed different breakdown voltages and temperature behaviors. We introduced newly defined temperature coefficient, γ, and found that γ’s are linearly dependent on breakdown voltages at each temperature. From these results, the empirical formula which effectively describes the temperature dependence of breakdown voltages was obtained.