The threshold-voltage model of MOSFET devices with localized interface charge
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[1] Ching-Yuan Wu,et al. A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices , 1997 .
[2] G. Taylor,et al. Effects of hot-carrier trapping in n- and p-channel MOSFET's , 1983, IEEE Transactions on Electron Devices.
[3] Richard S. Muller,et al. Analysis of MOSFET degradation due to hot-electron stress in terms of interface-state and fixed-charge generation , 1988 .
[4] F. Hsu,et al. Relationship between MOSFET degradation and hot-electron-induced interface-state generation , 1984, IEEE Electron Device Letters.
[5] G. Dorda,et al. Hot carrier degradation mechanism in n-MOSFETS , 1984, 1984 International Electron Devices Meeting.
[6] W. Hansch,et al. The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's , 1987, IEEE Transactions on Electron Devices.
[7]
A. Boudou,et al.
Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2>or=V/sub g/
[8] Ching-Yuan Wu,et al. A new simplified charge pumping current model and its model parameter extraction [MOSFET] , 1996 .
[9] M. Bourcerie,et al. Comments on "The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors" [with reply] , 1990 .
[10] S. Cristoloveanu,et al. Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region , 1987, IEEE Transactions on Electron Devices.
[12] G. Groeseneken,et al. Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation , 1989 .
[13] Hsing-Hai Chen,et al. AN ANALYTIC AND ACCURATE MODEL FOR THE THRESHOLD VOLTAGE OF SHORT CHANNEL MOSFETS IN VLSI , 1984 .
[14] Ching-Yuan Wu,et al. A new methodology for developing a fast two-dimensional MOSFET device simulator , 1991 .
[15] I. Kurachi,et al. Physical model of drain conductance, g/sub d/, degradation of NMOSFET's due to interface state generation by hot carrier injection , 1994 .