Single-crystal Si/NiSi2/Si(100) structures

High‐quality, uniform, Si/NiSi2/Si(100) structures were demonstrated by a combination of molecular‐beam epitaxy and postgrowth, high‐temperature annealing. A Si template technique ensures the epitaxial orientation of the Si overlayer. The unusual inverse Volmer–Weber mode observed during the growth of Si on NiSi2(100) is shown to be a result of interface and surface energetics. The evolution of the interface morphology of the double‐heteroepitaxial structures is discussed in terms of thermodynamics.

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