论文信息 - Characterization of p-type 4H-SiC epitaxial layer grown on (11-20) substrate - 字舞流文

Characterization of p-type 4H-SiC epitaxial layer grown on (11-20) substrate

Y. Ishida | K. Arai | Takaya Suzuki | T. Ohno | S. Yoshida | Tomoyuki N. Tanaka | Koh Masahara | Kazutoishi Kojima | Mituhiro Kushibe | Tetuo Takahashi

[1] H. Matsunami,et al. 4H-SiC (11-20) Epitaxial Growth , 2000 .

[2] Y. Sugawara,et al. High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face , 1999, IEEE Electron Device Letters.

[3] A. Ellison,et al. Photoluminescence of 4H-SiC: some remarks , 1999 .

[4] W. J. Choyke,et al. Photoluminescence and transport studies of boron in 4H SiC , 1998 .

[5] H. Matsunami,et al. Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence , 1997 .

[6] A. Ellison,et al. CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane , 1997 .

[7] A. Agarwal,et al. 1.1 kV 4H-SiC power UMOSFETs , 1997, IEEE Electron Device Letters.

[8] N. Ohtani,et al. Structural defects in α-SiC single crystals grown by the modified-Lely method , 1996 .

[9] Wolfgang J. Choyke,et al. Electrical and Optical Characterization of SiC , 1993 .

[10] Inspec,et al. Properties of silicon carbide , 1995 .