论文信息 - Fast-interface-state losses in charge-coupled devices.

Fast-interface-state losses in charge-coupled devices.

A simple model which predicts the large signal losses in charge‐coupled devices due to fast‐interface‐state trapping is presented, and the predictions of the model are verified by experimental measurements of losses in two‐phase CCD's.

W. F. Kosonocky | J. E. Carnes | W. Kosonocky | J. Carnes

[1] R. Engelbrecht,et al. DIGEST of TECHNICAL PAPERS , 1959 .

[2] S. M. Sze,et al. Physics of semiconductor devices , 1969 .

[3] W. Kosonocky,et al. Charge-coupled digital circuits , 1971 .

[4] A. S. Grove. Physics and Technology of Semiconductor Devices , 1967 .

[5] M. F. Tompsett,et al. Charge-coupled imaging devices: Design considerations , 1971 .

[6] G. E. Smith,et al. Charge coupled semiconductor devices , 1970, Bell Syst. Tech. J..