A new memory element based on silicon nanoclusters in a ZrO2 insulator with a high permittivity for electrically erasable read-only memory
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Y. Novikov | V. Gritsenko | K. Nasyrov | D. V. Gritsenko | J. W. Lee | A. Aseev | C. Kim | J. Lee
暂无分享,去创建一个
Y. Novikov | V. Gritsenko | K. Nasyrov | D. V. Gritsenko | J. W. Lee | A. Aseev | C. Kim | J. Lee