Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs

Two radiation hardening processes for shallow trench isolation (STI), i.e., Si+ implantation and STI oxide nitridation are investigated, including the impact on nominal electrical characteristics and radiation hardness. The total ionizing dose effects of the nMOS devices are proved to be sensitive to the STI radiation hardening process conditions. There are optimum process conditions to achieve the best effectiveness of radiation hardening. Then, a 130-nm radiation-hardened PDSOI technology has been developed. The radiation hardness is verified by static random access memories with small storage capacities.

[1]  Horng-Chih Lin,et al.  Improving radiation hardness of EEPROM/flash cell by N2O annealing , 1998, IEEE Electron Device Letters.

[2]  G. Lo,et al.  Radiation hardness of MOSFETs with N/sub 2/O-nitrided gate oxides , 1993 .

[3]  T. Oldham,et al.  Total ionizing dose effects in MOS oxides and devices , 2003 .

[4]  S. Zou,et al.  A New Method for Extracting the Radiation Induced Trapped Charge Density Along the STI Sidewall in the PDSOI NMOSFETs , 2013, IEEE Transactions on Nuclear Science.

[5]  H. L. Hughes,et al.  Hole and electron trapping in ion implanted thermal oxides and SIMOX , 2000 .

[6]  P. Dodd,et al.  Radiation effects in SOI technologies , 2003 .

[7]  Hei Wong,et al.  Two-fold coordinated nitrogen atom: an electron trap in MOS devices with silicon oxynitride as the gate dielectric , 1999 .

[8]  H.J. Barnaby,et al.  Total-Ionizing-Dose Effects in Modern CMOS Technologies , 2006, IEEE Transactions on Nuclear Science.

[9]  Radiation effects on fluorinated field oxides and associated devices , 1990 .

[10]  M. L. Alles,et al.  Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors , 2013, IEEE Transactions on Nuclear Science.

[11]  D. Wristers,et al.  Effects of chemical composition on the electrical properties of NO‐nitrided SiO2 , 1995 .

[12]  M. Liao,et al.  The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction , 2012 .

[13]  Sergio A. Ajuria,et al.  Furnace grown gate oxynitride using nitric oxide (NO) , 1994 .

[14]  Zhiyuan Hu,et al.  Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step ${\hbox {Si}}^ + $ Implantation , 2014, IEEE Transactions on Nuclear Science.

[15]  胡志远,et al.  Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs , 2014 .

[16]  Yunfei En,et al.  Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs , 2014, IEEE Electron Device Letters.

[17]  H. L. Hughes,et al.  The role of nanoclusters in reducing hole trapping in ion implanted oxides , 2003 .

[18]  Zhengxuan Zhang,et al.  Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs , 2013, Microelectron. Reliab..

[19]  R.,et al.  Challenges in hardening technologies using shallow-trench isolation , 1998 .

[20]  En Xia Zhang,et al.  Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing , 2004 .

[21]  J.A. Felix,et al.  Radiation Effects in MOS Oxides , 2008, IEEE Transactions on Nuclear Science.

[22]  J. L. Pelloie,et al.  Worst-case bias during total dose irradiation of SOI transistors , 2000 .

[23]  J. Scarpulla,et al.  Total dose-induced charge buildup in nitrided-oxide MOS devices , 1991 .

[24]  S. Senturia,et al.  Radiation effects in nitrided oxides , 1983, IEEE Electron Device Letters.

[25]  Wang Xi,et al.  Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation , 2006 .

[26]  P E Dodd,et al.  Current and Future Challenges in Radiation Effects on CMOS Electronics , 2010, IEEE Transactions on Nuclear Science.