Controlled growth of six-point stars MoS2 by chemical vapor deposition and its shape evolution mechanism

Monolayer semiconductors of molybdenum disulfide (MoS2) crystals have drawn tremendous attention due to their extraordinary electronic and optical properties. A uniform and high-quality crystalline MoS2 monolayer is greatly needed in fundamental studies and practical applications. Three-point star to six-point star MoS2 nanosheets are readily synthesized in a controlled manner using the chemical vapor deposition method. A possible coalescent model is proposed to study the evolution of the six-point star MoS2 domain. A comparative study of field effect transistors are performed to disclose the negative effect of grain boundaries on the transport properties based on six-point star MoS2.

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