An experimental study on transport issues and electrostatics of ultrathin body SOI pMOSFETs

We present an experimental study of the transport properties (low field hole mobility /spl mu//sub h/) and electrostatics (threshold voltage V/sub th/, and gate-to-channel capacitance C/sub gc/) of ultrathin body (UTB) SOI pMOSFETs using a large RingFet structure. Body thicknesses were /spl sim/4.3 nm to 50 nm. We find that 1) hole mobility decreases significantly as T/sub Si/<10 nm, and tends to show negligible dependence on the transverse electric field for extremely thin T/sub Si/ (<6 nm) and 2) a V/sub th/ shift of /spl sim/150 mV occurs over the studied T/sub Si/ range, accompanied by enhancement of weak inversion capacitance in thin body devices. Simulations were performed to provide insight into the experimental observations.

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