论文信息 - Derived distribution for electrical overstress failure thresholds of transistors

Derived distribution for electrical overstress failure thresholds of transistors

Electrical overstress lailure may be analysed as a manifestation of plasma instabilities in semiconductors. The alternative Wunsch-Bell thermal paradigm is also useful for practical failure modelling, and is the basis for the derivation of the new probability density function presented.

L. T. Wurtz | W. P. Wheless

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