论文信息 - InGaAs/GaAs Vertical-Cavity Surface Emitting Laser on GaAs (311)B Substrate Using Carbon Auto-Doping

InGaAs/GaAs Vertical-Cavity Surface Emitting Laser on GaAs (311)B Substrate Using Carbon Auto-Doping

We have realized a low threshold InGaAs/GaAs vertical-cavity surface emitting laser (VCSEL) grown on GaAs (311)B substrates by metalorganic chemical-vapor deposition. The lasers exhibited a threshold current of 16 mA and a threshold current density of 810 A/cm2 for a 50 µm circular active area device. We obtained low electric resistance of p-type DBRs on GaAs (311)B by using AlAs carbon auto-doping with a hole concentration of 2×1019 cm-3. We also demonstrated a stable polarization operation of (311)B grown VCSELs.

[1] Kenichi Iga,et al. P-type AlAs Growth on a GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors. , 1997 .

[2] F. Koyama,et al. Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine , 1997 .

[3] D. Deppe,et al. Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers , 1994 .