Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBTs

Self-aligned AlGaAs/GaAs single heterojunction bipolar transistors (HBTs) were fabricated using an advanced processing technology for microwave and millimeter-wave power applications. These devices were processed simultaneously, on different epilayers with similar layer structure design supplied from different vendors. They showed similar dc characteristics (current gain, /spl beta/=30) and their microwave performance was also identical (f/sub T/=60 GHz, f/sub max/=100 GHz). The HBTs showed different noise and reliability characteristics depending on their epilayer origin. HBT's from the high-reliability wafer showed MTTF of 10/sup 9/ h at junction temperature of 120/spl deg/C. They also presented very small 1/f noise with corner frequencies in the range of a few hundred Hz. Devices were subjected to bias and temperature stress for testing their noise and reliability characteristics. Stressed and unstressed devices showed generation-recombination noise with activation energies between 120-210 meV. Stress was found to increase the generation-recombination noise intensity but not its activation energy. These HBTs did not show any surface-related noise indicating that processing did not significantly influence noise characteristics. It was found that the base noise spectral density at low frequency can be correlated to the device long term reliability.

[1]  S. Wright,et al.  Noise spectroscopy of deep level (DX) centers in GaAs‐AlxGa1−xAs heterostructures , 1988 .

[2]  P. K. Ikalainen,et al.  Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.

[3]  Gijs Bosman,et al.  Low frequency noise measurements as a tool to analyze deep-level impurities in semiconductor devices , 1987 .

[4]  D. Pavlidis,et al.  MOCVD growth parameter study of InP-based materials for high-performance HEMTs , 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

[6]  D. Pavlidis,et al.  Low-frequency noise characterization of high- and low-reliability AlGaAs/GaAs single HBTs , 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

[7]  S. Ng,et al.  A two-dimensional self-consistent numerical model for high electron mobility transistor , 1991 .

[8]  Lode K. J. Vandamme,et al.  Noise as a diagnostic tool for quality and reliability of electronic devices , 1994 .

[9]  Bumman Kim,et al.  1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz , 1996 .

[10]  William Liu Handbook of III-V Heterojunction Bipolar Transistors , 1998 .

[11]  Z. Yiqi,et al.  h/sub FE/ instability and 1/f noise in bipolar transistors , 1990, 28th Annual Proceedings on Reliability Physics Symposium.

[12]  D. Pavlidis,et al.  Frequency-dependent characteristics and trap studies of lattice-matched (x=0.53) and strained (x>0.53) In/sub 0.52/Al/sub 0.48/As/In/sub x/ Ga/sub 1-x/As HEMTs , 1991 .

[13]  M. Tutt,et al.  Low frequency noise characteristics of self-aligned AlGaAs/GaAs power heterojunction bipolar transistors , 1995 .

[14]  James S. Harris,et al.  Low-frequency noise properties of N-p-n AlGaAs/GaAs heterojunction bipolar transistors , 1992 .

[15]  D. Pavlidis,et al.  AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

[16]  K. Kasahara,et al.  Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP , 1993 .

[17]  Yi-Jen Chan,et al.  Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations , 1994 .

[18]  F. Alexandre,et al.  Modern epitaxial techniques for HBT structures , 1995 .

[19]  C. Delseny,et al.  Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures , 1994 .

[20]  Y. Danto,et al.  Analysis of the surface base current drift in GaAs HBT's , 1996 .

[21]  T. S. Henderson The GaAs heterojunction bipolar transistor: an electron device with optical device reliability , 1996 .

[22]  M. Tutt,et al.  Screening for early and rapid degradation in GaAs/AlGaAs HBTs , 1997, 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.

[23]  B. K. Jones,et al.  Electrical Noise as a Measure of Quality and Reliability in Electronic Devices , 1993 .

[24]  C. Hsu,et al.  The In-Based Metal Ohmic Contacts to n-GaAs , 1994 .

[25]  J. L. Ebel,et al.  Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two-dimensional numerical simulation , 1993 .

[26]  M. E. Hafizi,et al.  Reliability analysis of GaAs/AlGaAs HBTs under forward current/temperature stress , 1990, 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).

[27]  Hirohiko Sugahara,et al.  Improved reliability of AlGaAs/GaAs heterojunction bipolar transistors with a strain-relaxed base , 1993, 15th Annual GaAs IC Symposium.

[28]  R. Zijlstra,et al.  Voltage noise in an AlxGa1−xAs‐GaAs heterostructure , 1990 .