Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems

This paper reviews advances in sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. Graphene-channel field effect transistors (G-FETs) and InP-based high electron mobility transistors (inP-HEMT) are experimentally examined as photonic frequency converters. Optoelectronic properties and three-terminal functionalities of the G-FETs and InP-HEMTs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A single transistor can photomix the optical subcarriers to generate LO and mix down the RF data on the sub-THz carrier to the IF band.