Recombination and excited-state absorption at photoluminescence centres in crystalline and amorphous arsenic triselenide

Abstract Results are presented of a detailed study of optical transitions from the excited states of the photoluminescence (PL) centres in c-As2Se3, including the first observation of photo-induced optical absorption (PA) arising from these states. It is inferred from observations of the decay rates and polarization dependences of the PL and PA that the lowest excited state of the PL centre is a triplet exciton state, and that the singlet-triplet splitting is 4 × 10−3 eV. The PA in the spectral range measured (0·4–2 eV) appears to probe transitions from the excttcd PL centres to states in the continuum. Also observed for the first time is PA from the excited states of the PL centres in a-As2Se3. The properties of the PL centres in a-As2Se3 and c-As2Se3 are compared.

[1]  M. Kastner,et al.  Comparison of the luminescence centers in a-As2Se3 and c-As2Se3 by time-resolved photoluminescence and photo-induced absorption measurements , 1983 .

[2]  R. Sussmann,et al.  The excitonic gaps and Urbach tail in crystalline As2Se3 , 1981 .

[3]  B. Cavenett,et al.  Observation of bound exciton and distant pair resonances in amorphous phosphorus , 1981 .

[4]  B. C. Cavenett,et al.  Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductors , 1981 .

[5]  A. Stoneham,et al.  Singlet-triplet splittings in free and self-trapped excitons , 1981 .

[6]  G. Weiser,et al.  Electroabsorption on the Indirect Gap of As2Se3 , 1980 .

[7]  B. Smith,et al.  The crystal growth and atomic structure of As2(Se, S)3 compounds , 1979 .

[8]  M. Kastner,et al.  Evidence for the neutrality of luminescence centres in chalcogenide glasses , 1978 .

[9]  N. Mott,et al.  The lifetime of electrons, holes and excitons before self-trapping , 1977 .

[10]  R. Street.  Luminescence in amorphous semiconductors , 1976 .

[11]  R. Street,et al.  Photoluminescence in single-crystal chalcogenides in the system As2Se3-xSx , 1974 .

[12]  R. T. Williams,et al.  Excited-state absorption spectroscopy of self-trapped excitons in alkali halides , 1974 .

[13]  B. Averbach,et al.  Crystalline structures of As2Se3 and As4Se4 , 1973 .

[14]  M. Marrone,et al.  EPR in Triplet States of the Self-Trapped Exciton , 1973 .

[15]  A. Ward,et al.  Lattice Vibrations and Interlayer Interactions in CrystallineAs2S3andAs2Se3 , 1971 .

[16]  D. A. Patterson,et al.  Evidence for a Triplet State of the Self-Trapped Exciton in Alkali-Halide Crystals , 1967 .

[17]  B. Cavenett,et al.  A new comparison of photoluminescence in crystalline and amorphous arsenic triselenide (As2Se3) , 1983 .

[18]  M. Kastner,et al.  Excitation-energy dependence of the photoluminescence total-light decay in arsenic chalcogenides , 1983 .

[19]  T. Ninomiya,et al.  Luminescence and optically detected ESR in a-As2S3 , 1980 .

[20]  D. Emin.  Dynamics of the optically induced properties of a small-polaronic glass , 1980 .

[21]  R. B. Murray,et al.  Studies of self-trapped exciton luminescence in KCl , 1977 .

[22]  R. Zallen,et al.  The Optical Properties, Electronic Structure, and Photoconductivity of Arsenic Chalcogenide Layer Crystals , 1976 .

[23]  W. Känzig,et al.  The electronic structure of V-centers , 1957 .