论文信息 - Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy

Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy

Low‐current‐threshold room‐temperature injection GaAs‐AlxGa1−xAs multi‐quantum‐well (MQW) lasers have been prepared by molecular beam epitaxy. Under pulsed current injection, lasing emission attributed to the n=1 electron‐to‐light‐hole (1 e‐lh) confined‐particle transition was observed at threshold. Above threshold, lasing emission involving the n=1 electron‐to‐heavy‐hole transition (1 e−hh) became dominant. Single longitudinal mode operation has also been observed for these broad‐area MQW lasers. For heat‐sink temperatures between 8 and 100 °C, the lasing current threshold Ith for the 1 e−hh transition has an exponential variation with temperature of the form Ith∝ exp(T/T0), where T0=230 °K.

C. Weisbuch | R. Dingle | R. C. Miller | W. Tsang

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