Lateral insulated gate transistors with improved latching characteristics

Lateral insulated gate transistors (LIGT's) were fabricated to study their applicability for power integrated circuits. Three independent techniques for improving LIGT latching current are described in this paper. Devices that latch at 510 A/cm2have been fabricated; devices that current-limit at 475 A/cm2without latching have also been demonstrated.

[1]  J. Appels,et al.  High voltage thin layer devices (RESURF devices) , 1979, 1979 International Electron Devices Meeting.

[2]  M.S. Adler,et al.  New high voltage IC technology , 1984, 1984 International Electron Devices Meeting.

[3]  K. Board,et al.  Lateral resurfed COMFET , 1984 .

[4]  V. Rumennik,et al.  Power devices are in the chips: New power integrated circuits, called PICs, put both power-handling semiconductors and logic on the same IC chip; soon they may be part of every household appliance , 1985, IEEE Spectrum.

[5]  M.S. Adler,et al.  VIB-5 analysis of current flow in lateral insulated gate transistors , 1985, IEEE Transactions on Electron Devices.

[6]  M.S. Adler,et al.  The insulated gate rectifier (IGR): A new power switching device , 1982, 1982 International Electron Devices Meeting.

[7]  A. Goodman,et al.  The COMFET—A new high conductance MOS-gated device , 1983, IEEE Electron Device Letters.

[8]  V. Rumennik,et al.  Comparison of high voltage devices for power integrated circuits , 1984, 1984 International Electron Devices Meeting.

[9]  E.J. Wildi,et al.  Modeling and process implementation of implanted RESURF type devices , 1982, 1982 International Electron Devices Meeting.