[Papers] Statistical Analyses of Random Telegraph Noise in Pixel Source Follower with Various Gate Shapes in CMOS Image Sensor

[1]  Shinya Ichino,et al.  Analysis of Random Telegraph Noise Behaviers of nMOS and pMOS toward Back Bias Voltage Changing , 2017 .

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[5]  Rihito Kuroda,et al.  A Statistical Evaluation of Random Telegraph Noise of In-Pixel Source Follower Equivalent Surface and Buried Channel Transistors , 2013, IEEE Transactions on Electron Devices.

[6]  R. Kuroda,et al.  Statistical analysis of Random Telegraph Noise reduction effect by separating channel from the interface , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

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[8]  Tadahiro Ohmi,et al.  Understanding of traps causing random telegraph noise based on experimentally extracted time constants and amplitude , 2011, 2011 International Reliability Physics Symposium.

[9]  Isao Takayanagi,et al.  An APS-C format 14b digital CMOS image sensor with a dynamic response pixel , 2011, 2011 IEEE International Solid-State Circuits Conference.

[10]  Pierre Magnan,et al.  Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors , 2010 .

[11]  Tadahiro Ohmi,et al.  Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise , 2010 .

[12]  K. Takeuchi,et al.  New analysis methods for comprehensive understanding of Random Telegraph Noise , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[13]  Tadahiro Ohmi,et al.  Asymmetry of RTS characteristics along source-drain direction and statistical analysis of process-induced RTS , 2009, 2009 IEEE International Reliability Physics Symposium.

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