Positive charge and interface state generation in a thin gate oxide (30 nm) metal‐oxide‐semiconductor capacitor

The study of the positive oxide charge and the interface state creation in aluminium gate metal‐oxide‐silicon capacitors subjected to Fowler–Nordheim electron injection from the aluminium gate is performed. Band‐gap ionization and emission of trapped electrons from initially neutral traps seem unlikely in these samples. The positive charge formation is linked to the relaxed hydrogen related species. Interface states are directly created by hot electrons, and by the conversion of a few holes to interface states during a warm‐up to room temperature. But these interface states are especially due to the relaxation of the atomic or molecular hydrogen.

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