AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA

Optimization of the migration-enhanced metalorganic chemical vapor deposition and further optimization of the contact and active layer design for 280nm light-emitting diodes resulted in large improvement of cw and pulsed output power and in a superior spectrum purity. The ratio of the main peak to the background luminescence determined by the detection system is higher than 2000:1 at 20mA dc. The on-wafer cw power was measured to be 255μW at 20mA dc. The power popped up exceeding 1mW for a packaged device under 25mA dc and 9mW under pulse 200mA. The maximum wall-plug-efficiency of 0.67% was obtained for the packaged device at 25mA dc.

[1]  Max Shatalov,et al.  AlGaN-based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW , 2004 .

[2]  M. Asif Khan,et al.  High-efficiency 269 nm emission deep ultraviolet light-emitting diodes , 2004 .

[3]  M. Asif Khan,et al.  AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire , 2002 .

[4]  Grigory Simin,et al.  Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm , 2003 .

[5]  M. Shatalov,et al.  High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes , 2003 .

[6]  Robert Kaplar,et al.  Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels , 2004 .

[7]  M. Shur,et al.  III-NITRIDE BASED UV LIGHT EMITING DIODES , 2004 .

[8]  K. B. Nam,et al.  Unique optical properties of AlGaN alloys and related ultraviolet emitters , 2004 .

[9]  Hong Wang,et al.  Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management , 2002 .

[10]  Manijeh Razeghi,et al.  4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes , 2003 .

[11]  Grigory Simin,et al.  Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm , 2002 .

[12]  Shuji Nakamura,et al.  292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base , 2003 .

[13]  Vinod Adivarahan,et al.  AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission , 2003 .

[14]  Hong Wang,et al.  Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm , 2002 .

[15]  Manijeh Razeghi,et al.  High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well , 2004 .