Epitaxial growth of quantum-dot heterostructures on metamorphic buffers
暂无分享,去创建一个
Alexey E. Zhukov | Alexey Vasilyev | Elizaveta Semenova | Natailia Kryzhanovskaya | Andrey G. Gladyshev | Mikhail V. Maximov | Victor M. Ustinov | Nikolai Ledentsov
[1] James S. Harris,et al. Long-wavelength GaInNAs(Sb) lasers on GaAs , 2002 .
[2] Alexey E. Zhukov,et al. GaAs-based long-wavelength lasers , 2000 .
[3] A. R. Kovsh,et al. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm , 1999 .
[4] D. Bimberg,et al. Injection lasers based on InGaAs quantum dots in an AlGaAs matrix , 1998 .
[5] James S. Harris,et al. Long wavelength GaInNAs(Sb) lasers on GaAs , 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).
[6] Shin-ichirou Gozu,et al. Very high electron mobilities at low temperatures in InxGa1−xAs/InyAl1−yAs HEMTs grown lattice-mismatched on GaAs substrates , 1999 .
[7] D. Bimberg,et al. Quantum dot lasers , 2003, LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).
[8] H. Sakaki,et al. Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .
[9] L. Goldstein,et al. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices , 1985 .