Novel hot-electron effects in the channel of MOSFET's observed by capacitance measurements

Capacitance-voltage measurements were performed on small-size MOSFET's with applied drain voltage to obtain information about hot-electron effects. The theoretical analysis shows that hot carriers cause remarkable changes 1) in the vertical and horizontal distribution of the electrons in the inversion layer, 2) in the surface potential drop, 3) in the depletion charge, and 4) in the effective threshold voltage. The influence of these hot-electron effects on the channel current is discussed.

[1]  D. F. Nelson,et al.  High‐field drift velocity of electrons at the Si–SiO2 interface as determined by a time‐of‐flight technique , 1983 .

[2]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[3]  C. Sah,et al.  Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors☆ , 1966 .

[4]  F. Schäffler,et al.  Subband spectroscopy at room temperature , 1981 .

[5]  F. Stern,et al.  Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit , 1967 .

[6]  C. Jacoboni,et al.  A review of some charge transport properties of silicon , 1977 .

[7]  J. Plummer,et al.  Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces , 1980 .

[8]  G. Dorda,et al.  Analytical approach of hot electron transport in small size MOSFET's , 1981 .

[9]  G. Dorda,et al.  The current-voltage characteristics of field-effect transistors with short channels , 1976 .

[10]  P. K. Basu.  Monte Carlo calculation of hot electron drift velocity in silicon (100)-inversion layer by including three subbands , 1978 .

[11]  Jean-Pierre Leburton,et al.  Effect of the electron temperature on the gate-induced charge in small size mos transistors , 1983 .

[12]  C. Sah,et al.  The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors , 1966 .

[13]  T. Ando.  Subband Structure of an Accumulation Layer under Strong Magnetic Fields , 1975 .

[14]  Shojiro Asai,et al.  Submicrometer MOSFET structure for minimizing hot-carrier generation , 1982 .