Radiation degradation mechanisms in laser diodes

Degradation mechanisms are investigated for laser diodes fabricated with different materials and wavelengths between 660 and 1550 nm. A new approach is developed that evaluates laser degradation below the laser threshold to determine the radiation-induced recombination density. This allows mechanisms at high injection, such as Auger recombination, to be separated from low-injection damage. New results show that AlGaInP lasers in the visible region are nearly an order of magnitude more resistant to radiation damage than devices fabricated with AlGaAs or InGaAsP at longer wavelengths.

[1]  J. Pankove,et al.  Temperature dependence of emission efficiency and lasing threshold in laser diodes , 1968 .

[2]  B. H. Rose,et al.  Proton damage effects on light emitting diodes , 1982 .

[3]  Y. Uematsu,et al.  Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers , 1985, IEEE Journal of Quantum Electronics.

[4]  A. Campbell,et al.  Particle Damage Effects in GaAs JFET Test Structures , 1986, IEEE Transactions on Nuclear Science.

[5]  A. Ougouag,et al.  Carrier removal and changes in electrical properties of neutron irradiated GaAs , 1991 .

[6]  J. Schlafer,et al.  Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasers , 1993 .

[7]  Robert J. Walters,et al.  Damage correlations in semiconductors exposed to gamma, electron and proton radiations , 1993 .

[8]  Bruce D. Evans,et al.  5.5-MeV proton irradiation of a strained quantum-well laser diode and a multiple quantum-well broadband LED , 1993 .

[9]  R. S. Geels,et al.  Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes , 1994 .

[10]  L. Coldren,et al.  Diode Lasers and Photonic Integrated Circuits , 1995 .

[11]  Tawee Tanbun-Ek,et al.  Analysis of gain in determining T/sub 0/ in 1.3 /spl mu/m semiconductor lasers , 1995 .

[12]  Igor Vurgaftman,et al.  Effects of bandgap, lifetime, and other nonuniformities on diode laser thresholds and slope efficiencies , 1997 .

[13]  Kenneth F. Galloway,et al.  200 MeV proton damage effects on multi-quantum well laser diodes , 1997 .

[14]  H. Schone,et al.  AlGaAs vertical-cavity surface-emitting laser responses to 4.5-MeV proton irradiation , 1997, IEEE Photonics Technology Letters.

[15]  Seoung-Hwan Park,et al.  Theory and experiment of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ and In/sub 1-x-y/Ga/sub x/Al/sub y/As long-wavelength strained quantum-well lasers , 1999 .

[16]  M. Razeghi,et al.  Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[17]  J. Coleman,et al.  Strained-layer InGaAs quantum-well heterostructure lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[18]  Allan H. Johnston,et al.  Proton damage in advanced laser diodes , 2001 .

[19]  peixiong zhao,et al.  Effects of 2 MeV proton irradiation on operating wavelength and leakage current of vertical cavity surface emitting lasers , 2003 .

[20]  M. Hybertsen,et al.  A theoretical investigation of the characteristic temperature T/sub 0/ for semiconductor lasers , 2003 .