DESIGN AND IMPLEMENTATION OF LOW-NOISE AMPLIFIER FOR ULTRA-WIDEBAND RECEIVER IN 180nm CMOS TECHNOLOGY

This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) using two stage cascading topology to obtain high gain. Inductive degeneration and peaking inductor techniques are used to obtain wideband matching and flatness of gain. The proposed UWB LNA is implemented by using 180nm based CMOS TSMC technology using Advanced Design System (ADS) software.LNA achieves maximum gain of 15.5dB, minimum noise figure of 2.88dB, -6dBm of IIP3 and wideband input matching in the UWB frequency range of 3.1GHz to 10.6GHz. The proposed LNA provides group delay of 60ps and isolation of less than 25dB under the 1.8V DC power supply.

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