Electrical properties of AuN thin films

Gold nitride (AuN) is a recently synthesized component and is being studied for properties like optical, electrical and mechanical. Plasma-assisted physical vapor deposition (PAPVD) in pulsed arc system is used for deposition of AuN thin film. The system is formed of a reactor in which there are two faced electrodes, and a power-controlled system that performs the discharge systematically. Chemical analyses were realized by x-ray photoelectron spectroscopy (XPS) technique, and narrow N 1s and Au 4f spectra are shown using film stoichiometry, and I–V curves were obtained in two ways (substrate–film and film–substrate), to observe the electrical properties.