论文信息 - Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering - 字舞流文

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

Zheng Zhang | R. Zhao | T. Chong | J. Robertson | J. S. Pan | E. Chua | Y. Jiang | V. Zhuo | L. P. Shi | M. Li