Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr 0.52 Ti 0.48 O 3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO 2) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (I d ∼ 100 µA/µm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau–Devonshire theory and the Landau–Khalatnikov equation. Ferroelectric (FE) field-effect transistor (FET), lead zirconate titanate, negative capacitance (NC), sub-kT/q switching.

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