Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle
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A. A. Quivy | P. P. González-Borrero | J. R. Leite | M. D. Silva | E. Marega | A. Quivy | J. Leite | Euclydes Marega | M. J. da Silva | P. P. Gonzalez-Borrero
[1] P. P. González-Borrero,et al. Correlation between structural and optical properties of InAs quantum dots along their evolution , 2001 .
[2] K. Eberl,et al. Nanoscale InP islands embedded in InGaP , 1995 .
[3] S. Denbaars,et al. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces , 1993 .
[4] A. Madhukar,et al. Mass transfer in Stranski–Krastanow growth of InAs on GaAs , 1997 .
[5] Y. Arakawa,et al. Density Control of GaSb/GaAs Self-assembled Quantum Dots (〜25nm) Grown by Molecular Beam Epitaxy , 1998 .
[6] Leonard,et al. Critical layer thickness for self-assembled InAs islands on GaAs. , 1994, Physical review. B, Condensed matter.
[7] Albert-László Barabási,et al. Self-assembled island formation in heteroepitaxial growth , 1997, cond-mat/9703252.
[8] G. Solomon,et al. EFFECTS OF MONOLAYER COVERAGE, FLUX RATIO, AND GROWTH RATE ON THE ISLAND DENSITY OF INAS ISLANDS ON GAAS , 1995 .
[9] M. A. Herman,et al. Molecular Beam Epitaxy: Fundamentals and Current Status , 1989 .
[10] Petroff,et al. Simulation model for self-ordering of strained islands in molecular-beam epitaxy. , 1996, Physical review. B, Condensed matter.
[11] Eaglesham,et al. Dislocation-free Stranski-Krastanow growth of Ge on Si(100). , 1990, Physical review letters.
[12] H. Sakaki,et al. Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .
[13] Nobuhiko P. Kobayashi,et al. In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001) , 1996 .