A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance

We demonstrate a scaled replacement-metal-gate InGaAs-on-Insulator n-FinFET on Si with L<inf>G</inf> = 13 nm and record I<inf>on</inf> of 249 μA/μm at fixed I<inf>off</inf> = 100 nA/μm and V<inf>d</inf> = 0.5 V. A subthreshold swing in saturation of 89 mV/dec and a R<inf>on</inf> of 355 Ω-μm is also achieved. We further investigate the transport mechanisms at play in order to shed light on the contribution from short-channel effects and carrier generation and recombination mechanisms on SS and I<inf>off</inf>, at such a short gate length, using calibrated full 3D and simplified 2D TCAD simulations.