论文信息 - Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates - 字舞流文

Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates

S. Juršėnas | P. Perlin | R. Czernecki | M. Leszczynski | M. Kryśko | C. Skierbiszewski | T. Suski | I. Grzegory | P. Wiśniewski | G. Franssen | P. Mensz | C. Skierbiszewski | T. Swietlik | I. Grzegory