Thermal transportation simulation of a susceptor structure with ring groove for the vertical MOCVD reactor

Abstract A new susceptor structure with a ring groove on the conventional column-shaped graphite susceptor is proposed for the vertical and induction heating MOCVD reactor, aimed at dividing the inner heat of susceptor into two parts, one of which accumulates on the upside and the other downside of the groove. The shape of the ring groove that changes the directions of heat conduction in the susceptor is optimized and validated by using finite element method (FEM). Compared with the conventional one, the optimized susceptor improves the uniformity of temperature distribution in the wafer and consequently promotes the growth characteristics.

[1]  G. Rubloff,et al.  Influence of gas composition on wafer temperature in a tungsten chemical vapor deposition reactor: Experimental measurements, model development, and parameter identification , 2001 .

[2]  Dimitrios I. Fotiadis,et al.  Flow and heat transfer in CVD reactors : comparison of Raman temperature measurements and finite element model predictions , 1990 .

[3]  S. Sugawara,et al.  Computational analysis of wafer temperature non-uniformity in MOVPE system , 2004 .

[4]  Shuji Nakamura,et al.  The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[5]  P. Paskov,et al.  Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor , 2006 .

[6]  Andrew G. Glen,et al.  APPL , 2001 .

[7]  O. Klein,et al.  Transient numerical investigation of induction heating during sublimation growth of silicon carbide single crystals , 2003 .

[8]  R. C. Weast CRC Handbook of Chemistry and Physics , 1973 .

[9]  Qi-Sheng Chen,et al.  Effects of induction heating on temperature distribution and growth rate in large-size SiC growth system , 2004 .

[10]  K. Ohkawa,et al.  Effect of thermal radiation and absorption in GaN-MOVPE growth modeling on temperature distribution and chemical state , 2005 .

[11]  D. Fotiadis,et al.  Transport phenomena in vertical reactors for metalorganic vapor phase epitaxy: I. Effects of heat transfer characteristics, reactor geometry, and operating conditions , 1990 .

[12]  G. G. Stokes "J." , 1890, The New Yale Book of Quotations.

[13]  S. Nakamura,et al.  Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes , 1994 .

[14]  Jun Hu,et al.  STUDY ON TEMPERATURE FIELD INDUCED IN HIGH FREQUENCY INDUCTION HEATING , 2006 .

[15]  Hadis Morkoç,et al.  High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures , 1997 .