Induced magnetic moment of Eu3+ ions in GaN
暂无分享,去创建一个
[1] P. Smet,et al. Luminescence and x-ray absorption measurements of persistent SrAl 2 O 4 :Eu,Dy powders: Evidence for valence state changes , 2011 .
[2] J. Cezar,et al. Magnetic state of EuN: X-ray magnetic circular dichroism at the EuM4,5andL2,3absorption edges , 2011 .
[3] M. Boćkowski,et al. Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN , 2011 .
[4] M. Boćkowski,et al. Zeeman splittings of the 5 D 0 – 7 F 2 transitions of Eu 3 + ions implanted into , 2011 .
[5] M. Boćkowski,et al. Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy , 2010 .
[6] K. P. O'Donnell,et al. Rare-Earth doped III-nitrides for optoelectronic and spintronic applications , 2010 .
[7] Y. Fujiwara,et al. Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy , 2010 .
[8] K. Ollefs,et al. Gd-doped GaN studied with element specificity: Very small polarization of Ga, paramagnetism of Gd and the formation of magnetic clusters , 2010 .
[9] Y. Fujiwara,et al. Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection , 2009 .
[10] A. Steckl,et al. Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy , 2009 .
[11] B. Sales,et al. Temperature dependence of Eu 4f and Eu 5d magnetizations in the filled skutterudite EuFe4Sb12 , 2009 .
[12] A. Steckl,et al. Spectroscopic and energy transfer studies of Eu3+ centers in GaN , 2007 .
[13] R. Pässler. Basic moments of phonon density of states spectra and characteristic phonon temperatures of group IV, III–V, and II–VI materials , 2007 .
[14] B. Hourahine,et al. Rare earth doped III-nitrides for optoelectronics , 2006 .
[15] A. Steckl,et al. Optical and magnetic properties of Eu-doped GaN , 2006 .
[16] G. Laan. Hitchhiker's guide to multiplet calculations , 2006 .
[17] A. Steckl,et al. Demonstration of a visible laser on silicon using Eu-doped GaN thin films , 2005 .
[18] T. Uruga,et al. Determination of the Eu(II)/Eu(III) ratios in minerals by X-ray absorption near-edge structure (XANES) and its application to hydrothermal deposits , 2005, Mineralogical Magazine.
[19] O Brandt,et al. Colossal magnetic moment of Gd in GaN. , 2005, Physical review letters.
[20] K. Akimoto,et al. Magnetic Properties of Eu-Doped GaN Grown by Molecular Beam Epitaxy , 2003 .
[21] K. Akimoto,et al. Valence transition of Eu ions in GaN near the surface , 2002 .
[22] Anthony J. Kenyon,et al. Recent developments in rare-earth doped materials for optoelectronics , 2002 .
[23] Jason Heikenfeld,et al. Red light emission by photoluminescence and electroluminescence from Eu-doped GaN , 1999 .
[24] Robert W. Martin,et al. Origin of Luminescence from InGaN Diodes , 1999 .
[25] S. P. Frigo,et al. Origin of luminescence from porous silicon deduced by synchrotron-light-induced optical luminescence , 1993, Nature.
[26] M. Salvi,et al. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials , 1989 .
[27] Thole,et al. Strong magnetic dichroism predicted in the M4,5 x-ray absorption spectra of magnetic rare-earth materials. , 1985, Physical review letters.
[28] G. Sawatzky,et al. 3d x-ray-absorption lines and the 3d94fn+1 multiplets of the lanthanides. , 1985, Physical review. B, Condensed matter.
[29] R. D. Cowan,et al. The Theory of Atomic Structure and Spectra , 1981 .
[30] D W Goodwin,et al. Spectra and Energy Levels of Rare Earth Ions in Crystals , 1969 .
[31] 村尾 剛. G.H. Dieke: Spectra and Energy Levels of Rare Earth Ions in Crystals, Interscience Pub., New York, 1968, 401頁, 16×23.5cm, $13.95. , 1969 .
[32] Robert A. Satten,et al. Spectra and energy levels of rare earth ions in crystals , 1968 .
[33] J. Bearden,et al. REEVALUATION OF X-RAY ATOMIC ENERGY LEVELS. , 1967 .