论文信息 - Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates - 字舞流文

Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates

D. Kahler | D. Knuteson | A. Berghmans | B. Wagner | S. McLaughlin | M. King | J. Oliver | N. Singh | R. Rai