Impurity induced layer disordering of Si implanted AlxGa1−xAs‐GaAs quantum‐well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops
暂无分享,去创建一个
N. Holonyak | R. Kaliski | M. Feng | K. Hsieh | L. Guido | V. Eu | R. D. Burnham
[1] N. Holonyak,et al. Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering , 1986 .
[2] C. B. Carter,et al. Defect structure and intermixing of ion-implanted AlxGa1−xAs/GaAs superlattices , 1986 .
[3] N. Holonyak,et al. Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers , 1985 .
[4] Yoshiro Hirayama,et al. Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices , 1985 .
[5] N. Holonyak,et al. Si‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers , 1985 .
[6] W. M. Duncan,et al. Self-compensation in rapid thermal annealed silicon-implanted gallium arsenide , 1985 .
[7] H. Okamoto,et al. Compositional Disordering of GaAs-AlxGa1-xAs Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication , 1985 .
[8] N. Holonyak,et al. Implantation disordering of AlxGa1−xAs superlattices , 1985 .
[9] J. M. Whelan,et al. A comparison of rapid thermal annealing and controlled atmosphere annealing of Si‐implanted GaAs , 1985 .
[10] H. Okamoto,et al. Interdiffusion of Al and Ga in Si-Implanted GaAs–AlAs Superlattices , 1984 .
[11] M. Kuzuhara,et al. SiOxNy capped annealing for Si‐implanted GaAs , 1984 .
[12] N. Holonyak,et al. Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion , 1983 .
[13] James J. Coleman,et al. Disorder of an AlAs‐GaAs superlattice by silicon implantation , 1982 .
[14] T. Hirao,et al. Study of Encapsulants for Annealing Si‐Implanted GaAs , 1982 .
[15] W. Spitzer,et al. Si-defect concentrations in heavily Si-DOPED GaAs: annealing-Induced changes-II , 1981 .
[16] Karl Hess,et al. Disorder of an AlAs‐GaAs superlattice by impurity diffusion , 1981 .
[17] B. Streetman,et al. Study of Encapsulants for Annealing GaAs , 1977 .
[18] J. M. Whelan,et al. Annealing of Ion‐Implanted GaAs in a Controlled Atmosphere , 1976 .
[19] James F. Gibbons,et al. Projected range statistics: Semiconductors and related materials , 1975 .
[20] J E Pattison,et al. International symposium on GaAs and related compounds , 1975 .
[21] N. Holonyak,et al. Window‐Heat Sink Sandwich for Optical Experiments: Diamond (or Sapphire)‐Semiconductor‐Indium Sandwich , 1971 .