Investigation of DC-RF and breakdown behaviour in Lg = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications
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J. Ajayan | T. Ravichandran | D. Nirmal | P. Mohankumar | P. Prajoon | J. Charles Pravin | D. Nirmal | J. Ajayan | P. Prajoon | J. Pravin | T. Ravichandran | P. MohanKumar | P. Mohankumar
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